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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5252848 B1

PDFFull Text
Date of Patent:
Oct. 12, 1993

Filed:

Feb. 03, 1992

Low on resistance field effect transistor

Applicant:
Inventors:

Steven J Adler, Tempe, AZ (US);

Robert B Davies, Tempe, AZ (US);

Stephen J Nugent, Phoenix, AZ (US);

Hassan Pirastehfar, Mesa, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:

Barbee; Joe E.

Hightower; Robert F.

Primary Examiner:

Andrew J James

Assistant Examiner:

Stephen D Meier

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257328 ; 257335 ; 257339 ;
Abstract

A performance enhancing conductor (27) is employed to reduce a transistor's (10) on resistance and to also reduce the transistor's (10) parasitic gate to drain capacitance (32). The performance enhancing conductor (27) covers the transistor's (10) gate (22) and a portion of the drain region (18, 19) that is adjacent the transistor's channel (20). The performance enhancing conductor (27) is isolated from the gate (22) by an insulator (24, 26).

Find Patent Forward Citations

Adler, Steven. (1993). Low on resistance field effect transistor (U.S. Patent No. 5252848). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5252848

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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