The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1993
Filed:
May. 05, 1992
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257302 ; 257304 ; 257400 ;
Abstract
The DRAM cell of the invention comprises a structure wherein a deep trench is formed on a silicon wafer, a stacked trench capacitor is formed around a silicon pillar associated with the trench, and a vertical transfer transistor is formed on top of the silicon pillar after the formation of the stacked trench capacitor. The transfer transistor is connected to the storage capacitor through a selectively doped n.sup.+ diffused layer, and isolation between DRAM cells is formed by the trench.
Kim, Cheon. (1993). Trench dram cell with vertical transistor (U.S. Patent No. 5252845). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5252845
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