The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 1993

Filed:

Dec. 26, 1991
Applicant:
Inventors:

Hitoshi Abe, Tokyo, JP;

Tomoyuki Yamada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23B / ;
U.S. Cl.
CPC ...
505-1 ; 505701 ; 505702 ; 505729 ; 505730 ; 505731 ; 156603 ; 156610 ;
Abstract

In a method of forming an oxide superconductor/semiconductor junction between an oxide superconductor and a semiconductor containing bismuth or thallium, an atomic layer of silver of no more than 3 atoms thickness is formed by vapor deposition of silver on the surface of the semiconductor, an atomic layer of bismuth or thallium of no more than 3 atoms thickness is formed by vapor deposition of bismuth or thallium on the silver layer, the double atomic layer consisting of silver and bismuth or of silver and thallium are heated to form a layer wherein the atoms of silver and bismuth or silver and thallium are arranged regularly on the surface of the semiconductor, and the oxide superconductor is formed to a specified thickness on the regularly arranged layer.


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