The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1993
Filed:
Oct. 31, 1991
Applicant:
Inventors:
Karl H Kocmanek, Orlando, FL (US);
Leonard J Olmer, Orlando, FL (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437235 ; 437225 ; 437228 ;
Abstract
A method for forming a dielectric layer in an integrated circuit is disclosed. After a first dielectric layer is formed, a second dielectric layer is formed on top of the first layer. The second layer is formed by reducing precursor gas flow during the initial portion of the deposition process so that the initial film density of the deposited dielectric is higher or equal to the density of the bulk of the first and second dielectric.
Quick Actions:
Kocmanek, Karl. (1993). Integrated circuit interlevel dielectric wherein the first and second (U.S. Patent No. 5252520). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5252520
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile