The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1993
Filed:
Oct. 19, 1992
Applicant:
Inventors:
Alexander J Shuskus, West Hartford, CT (US);
Melvyn E Cowher, East Brookfield, MA (US);
Assignee:
United Technologies Corporation, Hartford, CT (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 437 85 ; 437110 ; 437133 ; 437939 ; 437945 ; 437959 ; 437911 ; 148D / ; 148D / ; 148D / ; 148D / ;
Abstract
GaAs films compensated with TEOV to reduce free electron concentration are grown having superior morphology by heating the TEOV above the temperature used in the prior art, filtering the other constituents but not the TEOV, and reducing the arsenic ambient during the preliminary heating phase.
Shuskus, Alexander. (1993). Teov doping of gallium arsenide (U.S. Patent No. 5252512). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5252512
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile