The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1993
Filed:
Nov. 22, 1991
Applicant:
Inventor:
Toshikazu Inoue, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156610 ; 156613 ; 156614 ; 156D / ; 156603 ; 437132 ; 437133 ;
Abstract
A monocrystalline layer of a III-V type or II-VI type compound semiconductor is epitaxially grown on a silicon substrate, and then subjected to a plurality of reheating steps during the cooling stage, wherein at least one of the upper limit temperatures of the reheating steps is lower than that used in the growing stage. The etch pit density is reduced to less than 10.sup.6 cm.sup.-2.
Inoue, Toshikazu. (1993). Process for growing semiconductor layer on substrate (U.S. Patent No. 5252173). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5252173
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile