The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1993
Filed:
May. 29, 1992
Noriyuki Fujita, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A radio frequency (RF) amplifier for amplifying an RF signal with a high power efficiency and with a minimum of signal distortions by using a GaAs field effect transistor (FET). An idling current for class 'A' amplification is set in the FET. An output low pass filter is connected to the drain of the FET and provided with an impedance higher than a high gain impedance, so that the FET and a load may be matched in power during high RF signal operation, i.e., the dynamic impedance of the FET and the impedance of the load may be matched. A drain bias to the FET is turned on and turned off in synchronism with the ON/OFF of the input RF signal. The amplifier, therefore, not only performs class 'A' amplification with a minimum of signal distortions but also further saves power since it is turned off in the absence of a signal, thereby achieving a higher power efficiency.