The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1993
Filed:
Jun. 04, 1992
Yoshio Morita, Osaka, JP;
Abstract
A semiconductor light-emitting device, such as LEDs AND laser diodes having emission wavelengths in a range which includes the blue to ultra-violet region of the spectrum are disclosed. The LED comprises a substrate and an p-n junction structure formed on the substrate, the p-n junction structure having first and second semiconductor layers, each consisting essentially of (Cu.sub.a Ag.sub.1-a)(Al.sub.b Ga.sub.1-b)(Se.sub.o S.sub.1-o).sub.2, wherein 0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, and 0.ltoreq.c.ltoreq.1, the first semiconductor layer being doped with N, P, or As, the second semiconductor layer being doped with Zn, Cd, Cl, Br, or I. A semiconductor laser comprises a substrate and a double-hetero structure formed on the substrate, the double-hetero structure having: a p-type semiconductor layer, an active layer formed on the p-type semiconductor layer, and n-type semiconductor layer formed on the active layer, each of the p-type semiconductor layer and n-type semiconductor layer consisting essentially of (Cu.sub.a Ag.sub.1-a)(Al.sub.b Ga.sub.1-b)(Se.sub.o S.sub.1-o).sub.2, wherein 0.ltoreq.a.ltoreq.1, 0.ltoreq.b.ltoreq.1, and 0.ltoreq.c.ltoreq.1, the active layer consisting essentially of (Zn.sub.d Cd.sub.1-d)(Se.sub.m S.sub.n Te.sub.1-m-n), wherein 0.ltoreq.d.ltoreq.1, 0.ltoreq.m.ltoreq.1, 0.ltoreq.n.ltoreq.1, and m+n.ltoreq.1.