The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1993
Filed:
Apr. 08, 1992
Siegfried Mantl, Julich, DE;
Helge Bay, Linnich, DE;
Forschungszentrum Julich GmbH, Julich, DE;
Abstract
An epitaxial growth of a first component of a multilayer stack for use in optical, electro-optical and electronic or magnetic components, e.g. on a silicon wafer, can be formed by depositing a second component in a form in which that second component produces a precipitate or inclusions in the first component which with continued deposition may be partly replaced by a third component so that the precipitate itself is buried in a monocrystalline structure and, after a thermal treatment in which the precipitate coalesces, a buried layer is formed of the second component or a compound thereof with, say, the first component, in that monocrystalline structure.