The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 1993

Filed:

Jun. 30, 1992
Applicant:
Inventors:

Leonard C Feldman, Berkeley Heights, NJ (US);

Neil E Hunt, Scotch Plains, NJ (US);

Dale C Jacobson, Hackettstown, NJ (US);

John M Poate, Summit, NJ (US);

Erdmann F Schubert, New Providence, NJ (US);

Arjen M Vredenberg, North Plainfield, NJ (US);

Yiu-Huen Wong, Summit, NJ (US);

George J Zydzik, Columbia, NJ (US);

Assignee:

AT&T Bell Laboratories, Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ; 372 49 ; 372 96 ; 372 99 ;
Abstract

This invention embodies an optical device with a Fabry-Perot cavity formed by two reflective mirrors and an active layer which is doped with a rare earth element selected from lanthanide series elements with number 57 through 71. The thickness of the active layer being a whole number multiple of .lambda./2 wherein .lambda. is the operating, or emissive, wavelength of the device, said whole number being one of the numbers ranging from 1 to 5, the fundamental mode of the cavity being in resonance with the emission wavelength of said selected rare earth element. Cavity-quality factors exceeding Q=300 and finesses of 73 are achieved with structures consisting of two Si/SiO.sub.2 distributed Bragg reflector (DBR) mirrors and an Er-implanted (.lambda./2) SiO.sub.2 active region. The bottom DBR mirror consists of four pairs and the upper DBR mirror consists of two-and-a half pairs of quarterwave (.lambda./4) layers of Si and SiO.sub.2. Photoluminescence at room temperature reveals a drastic enhancement of the luminescence intensity of the cavity emitted along the optical axis of the cavity versus the luminescence without the top mirror. The luminescence intensity of the cavity is typically 1-2 orders of magnitudes higher as compared to structures without a cavity. Furthermore, since the emission wavelength and the intensity decrease for off-normal emission angles, the change in emission wavelength can be quantitatively described by assuming that the on-axis component of the optical wave is resonant with the cavity.


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