The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1993
Filed:
Jun. 12, 1991
Applicant:
Inventor:
J Anthony Powell, North Olmsted, OH (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156645 ; 148 33 ; 148D / ; 156646 ; 156662 ; 156612 ; 156D / ; 252 791 ; 423346 ; 427249 ; 427309 ; 437100 ;
Abstract
The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of (1) preparing the growth surface of SiC wafers slightly off-axis (from less than 0.1.degree. to 6.degree.) from the (0001) plane, (2) subjecting the growth surface to a suitable etch, and then (3) growing the homoepitaxial film using conventional SiC growth techniques.