The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1993
Filed:
Feb. 07, 1992
Junji Saito, Isehara, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A process for the thermal-etching treatment of a GaAs substrate subjected to molecular beam epitaxy, which includes: heating the GaAs substrate above a temperature of 750.degree. C., at which temperature both Ga and As are eliminated from the GaAs substrate, while irradiating the GaAs substrate with an As molecular beam. After the heating and irradiating is complete contamination adhering to the GaAs substrate by eliminating a part of the underlying GaAs. The process can be performed by an apparatus which includes a prechamber and a growth chamber for growing an epitaxial layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile