The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1993
Filed:
Jun. 27, 1991
Joel Hartmann, Claix, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A method of making an electric contact of an MIS integrated circuit includes the following stages: depositing a thick film made of one first electric nonconductor on the integrated circuit provided with this element; depositing on the first nonconductor film a crash or barrier film made of a highly resistive material or a nonconductor able to be etched selectively with respect to the first nonconductor and a second electric nonconductor; forming opposite the active element a first opening in the barrier film and fixing the dimensions at the level of the active element of the electric contact to be embodied; depositing on the resulting structure obtained at least one second nonconducting film forming a second opening in the second nonconducting film, the second opening having a width larger than that the first opening; etching of the first nonconductor exposed during the previous step by using the etched barrier film as a mask, thus forming an electric contact hole of the active element, and metallizing of this contact hole.