The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1993
Filed:
Feb. 06, 1991
Yoshiaki Hisamoto, Itami, JP;
Hiroshi Yamaguchi, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An electrode region, which is formed in an active region in a semiconductor element forming region isolated by dielectric isolation, for example, comprises a polycrystalline semiconductor layer containing a predetermined conductivity type impurity in high concentration and a diffusion layer of the sam conductivity type formed in a periphery of the polycrystalline semiconductor layer. The polycrystalline semiconductor layer can be easily and correctly increased in impurity concentration and increased in high workability in thickness. Thus the semiconductor device having an electrode region of high concentration in desired thickness can be implemented.