The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1993
Filed:
Dec. 20, 1991
Applicant:
Inventor:
Steven L Merchant, Yorktown Heights, NY (US);
Assignee:
North American Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 21 ; 437 41 ; 257347 ;
Abstract
An improvement in a self-passivated high voltage semiconductor device is set forth with a thinned SOI layer having a linear lateral doping region coated with an oxide layer and a field plate being a part of the gate electrode layer. A high voltage SOI semiconductor device is formed having freedom from external electric fields.