The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1993
Filed:
Oct. 30, 1990
Applicant:
Inventors:
Mario Paparo, San Giovanni la Punta, IT;
Sergio Palara, Acicastello, IT;
Assignee:
SGS-Thomson Microelectronics S.r.l., Milan, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257502 ; 257337 ; 257528 ; 257776 ;
Abstract
A device accomplishes protection against breakdown of an N+ type diffused region (6) inserted in a vertical-type semiconductor integrated power structure. Such a structure comprises N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which a grounded P type insulation pocket (3) is obtained. The insulation pocket (3) contains an N type region (4) including a P type region (5) for the containment of the N+ type diffused region (6). The diffused region (6) is insulated electrically with respect to the P type containment region (5).