The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1993
Filed:
Aug. 25, 1992
Kenji Okada, Suita, JP;
Yasuaki Terui, Neyagawa, JP;
Juro Yasui, Toyonaka, JP;
Yoshihiko Hirai, Osaka, JP;
Masaaki Niwa, Hirakata, JP;
Atsuo Wada, Suita, JP;
Kiyoshi Morimoto, Neyagawa, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.