The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1993
Filed:
Sep. 05, 1990
Richard D Sivan, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A trench capacitor and transistor structure is formed in a semiconductor device. In one form, a transistor is fabricated within a cylindrical trench capacitor. The capacitor is formed within two displaced parallel planes in a substrate material, and has two electrodes which are separated by a dielectric material. The electrodes and dielectric are formed on a wall and a floor of the cylindrical trench. A column of epitaxial material is grown from the floor of the trench. A source region is formed by doping the top portion of the epitaxial column, and a drain region is formed by doping the floor of the trench. A gate electrode is deposited into the trench, creating a channel region along the sides of the epitaxial column. Thus, a transistor is also formed within the two displaced parallel planes in the substrate material.