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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5244821 B1

PDFFull Text
Date of Patent:
Sep. 14, 1993

Filed:

Jun. 07, 1991

Bipolar fabrication method

Applicant:
Inventors:

Thomas E Ham, Allentown, PA (US);

John W Osenbach, Kutztown, PA (US);

Morgan J Thoma, Macungie, PA (US);

Susan C Vitkavage, Zionsville, PA (US);

Assignee:

AT&T Bell Laboratories, Murray Hill, NJ (US);

Attorneys:

Smith; David L.

Rehberg; John T.

Primary Examiner:

Brian E Hearn

Assistant Examiner:

Tuan Nguyen

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 28 ; 148D / ;
Abstract

A method for forming a bipolar transistor is disclosed. An optional thin screen oxide (.apprxeq.150 .ANG.) may be formed upon a substrate over an already-defined collector region. A BF.sub.2 or other implantation is performed through the screen oxide to create the base. The screen oxide is removed and replaced with a patterned high pressure oxide so that the emitter may be defined. The resulting device has a more controllable Gummel number and breakdown voltage.

Find Patent Forward Citations

Ham, Thomas. (1993). Bipolar fabrication method (U.S. Patent No. 5244821). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5244821

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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