The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1993
Filed:
Aug. 15, 1991
Hiroyasu Makihara, Hyogo, JP;
Kenji Kohda, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A sense amplifier for nonvolatile semiconductor storage devices, wherein a first reference voltage is generated from a first reference voltage generating circuit and a second reference voltage is generated from a second reference voltage generating circuit. A latch type sense amplifier is provided, which is connected to a bit line via a selection transistor. The latch type sense amplifier includes input/output terminals in two directions and serves to latch information when the input voltage at one input/output terminal is higher than the voltage at the other input/output terminal. A first gate transistor, conductive in response to the second reference voltage, is connected between the output of the first reference voltage generating circuit and the one input/output terminal for the latch type sense amplifier. A second gate transistor, conductive in response to the second reference voltage, is connected between a load and the other input/output terminal of the latch type sense amplifier.