The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1993
Filed:
Jan. 30, 1992
Robert Bosch GmbH, Stuttgart, DE;
Abstract
Processes are proposed for structuring monocrystalline semiconductor substrates provided with a basic doping, in particular silicon substrates with a (100) or (110) crystal orientation. In this process, at least one main surface of the semiconductor substrate is passivated by means of a structured masking layer, and in an etching step etching into the semiconductor substrate is done anisotropically through openings in the masking layer. It is proposed that as the masking layer (12), a structured, preferably monocrystalline, layer of the basic material of the semiconductor substrate be used, which is doped such that a pn junction is produced between the masking layer (12) and the semiconductor substrate (10), the junction being polarized in the depletion direction and serving as an etch stop. It is also proposed that the semiconductor substrate (10) be formed of a substrate (11) and at least one layer (13), applied thereon, with buried zones (16), with pn junctions being produced between the zones (16) and the substrate (11). Zones (16) that are electrically insulated from one another and the semiconductor substrate (10) are electrically bonded, so that the pn junctions are polarized in the depletion direction and serve as an etch stop for deep etching.