The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 1993
Filed:
Nov. 19, 1991
Applicant:
Inventors:
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
136258 ; 257 51 ; 437-4 ; 437247 ; 437967 ;
Abstract
A photovoltaic device, wherein a non-crystalline semiconductor layer of one conductivity type formed on a single crystal or a polycrystalline semiconductor substrate of the opposite conductivity type is annealed thereby to change the non-crystalline semiconductor to a polycrystalline semiconductor, with a pn junction plane formed therebetween. The depth of the junction plane is 500 .ANG. or less from the light incident surface of the polycrystallized semiconductor. Moreover, the light incidence surface can be made uneven by increasing the growth rate of the non-crystalline semiconductor.