The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1993
Filed:
Jan. 22, 1992
Louis L Hsu, Fishkill, NY (US);
Seiki Ogura, Hopewell Junction, NY (US);
Joseph F Shepard, Hopewell Junction, NY (US);
Paul J Tsang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A lightly doped drain, field effect transistor with an inverted 'T'-gate structure has a gate electrode disposed on a polysilicon pad in a stack opening. The inner edge of a lightly-doped source and drain region is aligned with the gate electrode and its outer edge is aligned with an edge of the polysilicon pad. The inner edge of a heavily-doped source and drain region is aligned with the edge of the edge of the polysilicon pad and its outer edge is aligned with the wall surface that forms the opening. The inner edge of a source and drain contact region is aligned with the wall and extends under the stack.