The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 1993

Filed:

Jan. 08, 1992
Applicant:
Inventors:

Abraham Z Meiri, Haifa, IL;

Dov Ramm, Menashe, IL;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2504922 ;
Abstract

A method of proximity correction in an E-beam lithography system wherein each design shape is contracted by a predetermined bias and the E-beam dose required at any given point of the design is determined such that each of the design shapes is enlarged, on development, by the value of the predetermined bias, the determination of the E-beam dose being made in accordance with a predetermined relationship between an indicator, such as the electron backscatter, and the required E-beam dose, the indicator being defined for a plurality of points arranged on a coarse grid on the design and being indicative of the degree of the proximity effect at the respective point, the determination of the required dose being made by solving, at each of the plurality of points on the design, an integral equation relating the indicator to the E-beam dose distribution.


Find Patent Forward Citations

Meiri, Abraham. (1993). Proximity correction method for e-beam lithography (U.S. Patent No. 5241185). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5241185

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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