The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1993
Filed:
Apr. 07, 1992
Applicant:
Inventors:
Johannes G Bednorz, Wolfhausen, DE;
Jochen D Mannhart, Au, DE;
Carl A Mueller, Hedingen, DE;
Darrell Schlom, Menlo Park, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B05D / ; H01B / ;
U.S. Cl.
CPC ...
505-1 ; 505701 ; 505729 ; 257 33 ; 257 35 ; 257 39 ; 427 62 ; 427 63 ;
Abstract
An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.