The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 1993

Filed:

Mar. 10, 1992
Applicant:
Inventor:

Leendert De Bruin, Eindhoven, NL;

Assignee:

U.S. Philips Corp., New York, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437190 ; 437192 ; 437195 ; 437230 ;
Abstract

A semiconductor body has a surface structure (10) with an insulating layer (11) through which is formed an opening (12) defining a side wall (13) of insulating material bounding an exposed surface area (14a) of a region (14). An activating layer (15) is provided on the exposed surface area (14a) and the side wall (13) of the opening (12), and electrically conductive material deposited on the activating layer (15) to form an electrically conductive region (16) in the opening (12). The activating layer is provided so that the material (15a) on the sidewall (13) has different composition from the material (15b) on the exposed surface area (14a) and is selectively etched to remove the material (15a) from the sidewall (13) of the opening (12) leaving only the activating layer portion (15b) on the surface area (14a) of the underlying region so that little or no deposition of the electrically conductive material occurs on the opening sidewall (13), thereby inhibiting sideways growth of the electrically conductive material and thus avoiding or at least reducing the possibility of voids being formed in the electrically conductive region.


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