The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1993
Filed:
Apr. 27, 1992
Applicant:
Inventor:
Jun-ichi Nishizawa, Sendai, JP;
Assignee:
Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
422249 ; 1566171 ; 1566181 ; 1566202 ; 156601 ;
Abstract
In an apparatus for growing a GaAs single crystal from its melt, As vapor which is controlled appropriately of its pressure is applied from an As chamber to the surface of the GaAs melt in a vessel throughout the growing process through an As passage communicating between the melt vessel and the As chamber, while establishing a gentle temperature gradient in the passage leading from the GaAs melt vessel to the As chamber. Whereby, a GaAs single crystal having a large diameter and a good crystal perfection with minimized deviation from stoichiometry and minimized lattice dislocation can be obtained.