The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1993
Filed:
Nov. 05, 1992
Applicant:
Inventor:
Henri J Oguey, Corcelles, CH;
Assignee:
Centre Suisse D'Electronique et de Microtechnique S.A., Neuchatel, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365 45 ; 365185 ; 257321 ;
Abstract
The process according to the invention is applicable to a non-volatile memory cell with an MOS transistor structure with an insulated floating gate, a control electrode coupled capacitively to the floating gate and an injection zone separated from the floating gate by an injection oxide and capable of injecting or extracting charges into or from the floating gate. The process is characterized in that the control electrode is subjected to an alternating voltage of decreasing amplitude and the injection zone is subjected to a voltage representing the quantity to be stored. The invention applies to the storage of analog quantities.