The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1993
Filed:
Feb. 28, 1991
Satoshi Ohtani, Yokohama, JP;
Masayuki Yoshida, Kawasaki, JP;
Nobutaka Kitagawa, Kawasaki, JP;
Tomotaka Saito, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor substrate has a plurality of MOS transistors formed therein. Each of the transistors comprises high density diffusion regions having high impurity density and serving as source and drain, low density diffusion regions having low impurity density and extending in contact with the high density diffusion regions, respectively, a channel region formed between the low density diffusion regions, and a gate formed above the substrate and insulated from the channel region. One of the transistors has its drain connected to an input/output terminal. The low density diffusion region of the one has impurity density higher than that of the other. The channel length of the one is greater than that of the other.