The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 1993

Filed:

Sep. 20, 1991
Applicant:
Inventor:

Kouhei Eguchi, Chiyoda, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 62 ; 437 86 ; 437946 ; 437974 ; 148D / ; 148D / ;
Abstract

A first semiconductor substrate provided with an oxide film having protruded portions on a principal surface thereof is laminated and thermally bonded to a second substrate having recessed portions corresponding to the protruded portions. Alternatively, a first semiconductor substrate provided with an oxide film having recessed portions formed on a principal surface thereof is laminated and thermally bonded to a second semiconductor substrate provided with an oxide film constituting protruded portions corresponding to the recessed portions. The thermally bonded semiconductor substrates are polished from the side of the semiconductor toward the oxide film, and the protruded portions of the oxide film are used as a stopper, thus enabling a semiconductor layer having a desired thickness to be formed on the oxide film.


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Eguchi, Kouhei. (1993). Process for producing laminated semiconductor substrate (U.S. Patent No. 5238865). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5238865

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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