The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
Nov. 01, 1991
Satoru Amano, Tokyo, JP;
Hoya Corporation, Tokyo, JP;
Abstract
In a solid-state laser device for producing an outgoing laser beam having a waveband of near infrared radiation that is represented by a specific wavelength of, for example, 0.85 .mu.m, the solid-state laser device comprises a semiconductor laser device for producing an excitation laser beam having an excitation wavelength of, for example, 806 nm. By the excitation laser beam, a first laser medium such as a self-frequency doubling crystal produces a first laser beam having a first wavelength of, for example, 0.5315 .mu.m. The first wavelength is equal to a wavelength of a second harmonic of the first laser medium is shorter than the specific wavelength. Excited by the first laser beam, a second laser medium such as an Er:LiYF.sub.4 crystal produces a second laser beam having a second wavelength equal to the specific wavelength. The solid-state laser device thereby produces the second laser beam as the outgoing laser beam. The solid-state laser device further comprises a nonlinear optical crystal for converting the outgoing laser beam into a converted laser beam having a wavelength of 0.425 .mu.m. A Q-switching element may be disposed between the first and the second laser media. The self-frequency doubling crystal may be Nd.sub.x Y.sub.1-x Al.sub.3 (BO.sub.3).sub.4 crystal.