The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
Apr. 01, 1992
Applicant:
Inventor:
Ho-Jin Lee, Inchun, KR;
Assignee:
Samsung Electronics Co., Ltd., Suweon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257557 ; 257575 ; 257577 ;
Abstract
A lateral PNP transistor having either of the collector or the emitter diffusion layers layered with an n.sup.+ type diffusion layer, is shown. The added layer serves to increase the static electricity withstand stress along a transistor discharging path. A low withstand stress contributes to transistor damage at high breakdown voltages. When an n.sup.+ diffusion layer is formed within a diffusion layer in a lateral PNP transistor the transistor behaves as a combination of two transistors, PNP and NPN, selectively configured.