The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
May. 12, 1992
Kenichi Iga, Machida, JP;
Akira Ibaraki, Hirakata, JP;
Kenji Kawashima, Moriguchi, JP;
Kotaro Furusawa, Higashiosaka, JP;
Toru Ishikawa, Takatsuki, JP;
Research Development Corporation of Japan, Tokyo, JP;
Tokyo Institute of Technology, Tokyo, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A method of manufacturing a surface-emitting-type semiconductor laser device having a buried structure. A GaAlAs film is used as a mask layer in forming a GaAlAs/GaAs system burying part around a GaAlAs/GaAs system buried part. The mask layer can be formed continuously together with an active layer, a cladding layer and the like which constitute the buried part by means of a crystal growing apparatus for forming the buried part. When the system is etched, the GaAlAs film mask prevents the system buried part from becoming undercut so that the mask has better resistance to peeling during subsequent processing.