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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5236852 B1

PDFFull Text
Date of Patent:
Aug. 17, 1993

Filed:

Sep. 24, 1992

Method for contacting a semiconductor device

Applicant:
Inventors:

Michael Cherniawski, Austin, TX (US);

Jeffrey M Barker, Manor, TX (US);

Ronald E Pyle, Austin, TX (US);

Vidya S Kaushik, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:

Jones; Maurice Jay

Clingan, Jr.; James L.

Primary Examiner:

T N Quach

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 41 ; 437186 ; 437193 ; 437200 ; 148D / ;
Abstract

An electrical contact (46) to a phosphorous doped polysilicon gate electrode (18) is formed by preventing arsenic, from a source and drain implant, from doping a portion (22) of the polysilicon gate electrode (18). A photoresist mask (20) covers a portion (22) of the polysilicon gate electrode (18) during the implant, thus preventing it from being doped. An electrical contact (46) is then formed to the masked portion (22) of the polysilicon gate electrode (18).

Find Patent Forward Citations

Cherniawski, Michael. (1993). Method for contacting a semiconductor device (U.S. Patent No. 5236852). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5236852

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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