The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 1993
Filed:
Oct. 05, 1992
Roger W Pryor, Bloomfield Township, Bloomfield Hills County, MI (US);
The Board of Governors of Wayne State University, Detroit, MI (US);
Abstract
A method for preparing heteroepitaxial diamond films on silicon substrates is described. This method first involves the deposition of a cubic boron nitride layer on the silicon substrate as a first interfacial layer using laser ablation with a hexagonal boron nitride target in the presence of a nitrogen-containing atmosphere. The boron nitride layer is followed with a second interfacial layer, generally about 1 to 10 monolayers thick, of hydrogen terminated carbon which is deposited with laser ablation with a carbon target in the presence of atomic hydrogen. Finally, the heteroepitaxial diamond film is deposited using conventional chemical vapor deposition (CVD) techniques with a reactive gas mixture containing hydrogen, a carbon-containing gas or gases, and, optionally, oxygen. Large area, high quality heteroepitaxial diamond films can be prepared by this method. Silicon with such a heteroepitaxial diamond film should be especially suited for the fabrication of high-speed, high-power semiconductor devices at reasonable cost.