The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1993
Filed:
Dec. 10, 1991
Takashi Hosaka, Tokyo, JP;
Seiko Instruments Inc., , JP;
Abstract
The present invention relates to a method of forming contacts in contact holes used in the semiconductor devices. The object of the present invention is to flatten the contacts to contact holes of a size smaller than 1 .mu.m in order to decrease the contact resistance in the contact holes. After a contact hole is formed on an P.sup.+ diffused layer, a polycrystalline (or amorphous) silicon film containing P-type impurities is formed by a chemical vapor-phase deposition method to fill the contact hole. Then, the contact hole only is filled with the polycrystalline silicon film by an etch-back method. Contact to an N.sup.+ diffused layer is subsequently formed in the same manner using a silicon film containing N-type impurities, followed by an upper wiring. Since polycrystalline silicon film is formed by the vapor-phase deposition method maintaining good step-covering property, the contact hole is sufficiently filled. The polycrystalline silicon film containing impurities in a high concentration makes it possible to lower the contact resistance in the contact holes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile