The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1993
Filed:
Oct. 04, 1990
Samsung Electronics Co., Ltd., Kyunggi, KR;
Abstract
A method for manufacturing a semiconductor device including a combined stack-trench type capacitor is disclosed. The method comprises the steps of: forming a conductive layer serving as a first electrode of the capacitor both on the inside region of a trench and on a transistor and forming a planarizing layer on the conductive layer; forming a photoresist pattern on the planarizing layer; etching the planarizing layer and the conductive layer; and removing the planarizing layer. The sandwiched planarizing layer between the second conductive layer and the photoresist pattern prevents the exposing of the first electrode pattern during the photoetching, so that uncontaminated uniform dielectric film can be obtained.