The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1993
Filed:
Jan. 31, 1992
Keiji Oyoshi, Tsukuba, JP;
Tomonori Yamaoka, Tsukuba, JP;
Nippon Sheet Glass Co., Ltd., Osaka, JP;
Abstract
Provided herein is a process for producing a polycrystalline semiconductor film at a low temperature. The process comprises the steps of depositing on a glass substrate by plasma CVD an amorphous silicon film containing the crystal phase as well as hydrogen, heating the film using a heater, thereby releasing hydrogen from the film, and growing the crystal phase by silicon ion implantation, thereby changing the amorphous silicon film into a polycrystalline silicon film containing crystal grains. The releasing of hydrogen from the amorphous silicon film permits the polycrystalline silicon film to be formed at a lower temperature than before without the growth of crystal phase being inhibited.