The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 1993
Filed:
Mar. 20, 1992
Applicant:
Inventors:
Tetsuya Nagano, Kyoto, JP;
Masaru Koeda, Kyoto, JP;
Assignee:
Shimadzu Corporation, Nagakyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; H01L / ; G02B / ;
U.S. Cl.
CPC ...
156643 ; 1566591 ; 156662 ; 252 791 ; 359566 ;
Abstract
A dry etching method for etching a surface of a substrate with plasma of mixed gas including i) gas that is reactive to the material of the substrate, and ii) inert gas. Accumulation of reaction products between the substrate and the reactive gas ions on the substrate is effectively eliminated by the ions of the inert gas plasma. Accordingly the etching rate of the substrate is not lowered. Silicon carbide (SiC) is one of the most suitable object of the plasma etching of the present invention, since it is hard to engrave by conventional dry etching methods.