The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1993
Filed:
Oct. 13, 1992
Michael Geva, Allentown, PA (US);
Avishay Katz, Westfield, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A semiconductor device substrate has a major surface on which is located an insulating layer, such as silicon dioxide, having an aperture penetrating through it all the way down to the major surface. An impurity-doped plug, such as tungsten doped with zinc, is spatially selectively deposited in the aperture to a thickness such that the height of the plug is significantly less than the height of the aperture in the insulating layer, by means of a rapid-thermal-cycle low-pressure-metalorganic-chemical vapor deposition (RTC-LP-MOCVD) process. Then another plug, of (pure) conductive barrier metal such as tungsten, is deposited on at least the entire top surface of the impurity-doped plug and on the sidewalls of the insulating layer. The structure being fabricated can then be heated, in order to diffuse the impurity into the underlying semiconductor device substrate. A metallization layer such as titanium/platinum/gold can be deposited on the (pure) conductive barrier metal and patterned, in order to supply a desired access metallization for the device.