The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 1993
Filed:
Apr. 10, 1992
Applicant:
Inventors:
Baudouin de Cremoux, Orsay, FR;
Manijeh Razeghi, Yvette, FR;
Assignee:
Thomson-CSF, Puteaux, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437129 ; 437167 ; 437936 ; 148D / ;
Abstract
A method for the making of an optoelectronic device comprising at least one quantum well, the barriers of which are made of GaInP and the well of which is made of GaAs, is carried out by the interdiffusion of elements between barriers and quantum wells in such a way that there is a migration of at least indium elements from a barrier to the quantum well. The method can be applied to the making of quantum well lasers, photodetectors and optical guides.
de Cremoux, Baudouin. (1993). Method for the making of optoelectronic semiconductor devices (U.S. Patent No. 5232867). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5232867
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile