The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 1993

Filed:

Sep. 29, 1992
Applicant:
Inventors:

Chantal Arena, le Fontanil, FR;

Jean-Pierre Joly, St. Egreve, FR;

Patrice Noel, Sassenage, FR;

Michel Papapietro, Lyons, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118719 ; 118715 ; 118725 ; 118728 ; 118729 ;
Abstract

The invention relates to a gaseous phase chemical treatment reactor for wafers. The aim of the invention is to produce a reactor in which only the face of the wafer to be treated is in fact treated. This aim is achieved with the aid of a reactor comprising at least one treatment chamber (19) located within a main chamber (9) and connected by one of its ends to means (17) for injecting a treatment gas onto a wafer (1) and by its other end to a means (15) for securing said wafer, in that the latter is gripped between a heating susceptor or base (13) and the retaining means (15) in such a way as to seal said treatment chamber (19) and maintain within the latter a pressure below that of the main chamber (9). The invention more particularly relates to reactors for depositing tungsten on silicon wafers.

Published as:
FR2682047A1; EP0538092A1; US5232508A; JPH05214536A; FR2682047B1;

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