The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1993
Filed:
Jun. 26, 1990
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
An organic thin film and process for making the same, having electroconductivity, semiconductivity or superconductivity. The film is made of vapor-deposited bisethylenedithiatetrathiafulvalene (BEDT-TTF) by heating BEDT-TTF at a pressure of 10.sup.-2 Torr or below and at a temperature not higher than 260.degree. C. The temperature of the substrate on which the vapor is deposited is held at a lower temperature than the vapor. A thin film produced under these temperature and pressure conditions contains substantially no decomposition product. The electroconductivity of the film can be adjusted by selecting the substrate used for vapor-deposition of the film and the electron acceptor used as a dopant of the film. In order to achieve a vapor-deposited film with a high degree of orientation, silicon wafer is preferably used as a substrate for the film.