The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1993
Filed:
Oct. 09, 1991
Applicant:
Inventor:
Masaharu Hamasaki, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; E11C / ;
U.S. Cl.
CPC ...
257239 ; 257224 ; 257262 ; 377 60 ;
Abstract
A charge transfer and/or amplifying device includes a surface channel region of opposite conductivity type formed on the surface of a charge transfer buried channel region, a junction gate type field effect transistor formed of source and drain regions separated from each other by the buried channel region and the surface channel region and an insulated gate electrode formed on the surface channel region, wherein the gate electrode and the source region of the junction gate type field effect transistor are electrically coupled to thereby enhance a conversion efficiency.