Method for producing compound semiconductors and apparatus therefor

Abstract

Disclosed is a method of selective chemical vapor deposition for selectively forming thin films of a semiconductor, dielectric or metal on a semiconductor by providing a mask of SiO.sub.2 having a plurality of openings in various forms on the substrate, wherein a trimethyl gallium (TMG) gas as a Group III material, 10% hydrogen-based arsine (AsH.sub.3) gas as a Group V material, and 500 ppm hydrogen-based disilane (Si.sub.2 H.sub.6) gas as an n-type impurity material are alternately supplied onto the substrate, and each supply amount of the material gases is controlled at a value to obtain a film growth rate for forming the corresponding monoatomic layer or monomolecular layer to each material at each opening. Also disclosed is an apparatus for performing the above-disclosed method of chemical vapor deposition, wherein four reaction chambers are included, and the material gases are supplied to the respective reaction chambers in accordance with the following gas supply sequences: Chamber 1: TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement); Chamber 2: H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 ; Chamber 3: AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement); Chamber 4: H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2.