The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1993
Filed:
May. 04, 1992
Applicant:
Inventors:
Tao-Yuan Chang, Lincroft, NJ (US);
Rubens da Miranda, Redbank, NJ (US);
Harry W Tom, Rumson, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-7 ; 437174 ; 437942 ;
Abstract
A method for manufacturing a semiconductor device which includes a step of evaluating the dopant profile, in at least the depth dimension, in a processed or partially processed wafer. The evaluation is performed nondestructively, by measuring a differential reflectivity spectrum of the doped portion of the wafer. The resulting spectrum can be related to the Fourier transform of the dopant profile in the depth dimension.
Chang, Tao-Yuan. (1993). Method for manufacturing a semiconductor device, including optical (U.S. Patent No. 5229304). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5229304
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile