The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1993
Filed:
Sep. 20, 1991
Mitsuhiro Matsumoto, Tenri, JP;
Kazuaki Sasaki, Yao, JP;
Masaki Kondo, Nara, JP;
Tadashi Takeoka, Tenri, JP;
Hiroshi Nakatsu, Tenri, JP;
Masanori Watanabe, Nara, JP;
Osamu Yamamoto, Nara, JP;
Saburo Yamamoto, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.