The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1993
Filed:
Dec. 16, 1991
Faivel Pintchovski, Austin, TX (US);
Wilson D Calvert, Round Rock, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A solid source chemical vapor deposition apparatus and a CVD method for fabricating semiconductor devices are disclosed. In accordance with the process for fabricating semiconductor devices, a CVD reactor chamber having a solid reactant source apparatus coupled thereto is provided. The reactant source apparatus includes a container which can be heated in a controllable manner and which has a gas diffuser located in the container. The container is provided with gas input and output which are located so that a carrier gas can be passed through the gas diffuser and through a finely divided solid reactant source material which is positioned over the gas diffuser. The carrier gas together with any vapor derived from the solid reactant source material is conveyed from the outlet of the reactant source apparatus to the CVD reactor chamber. Semiconductor substrates are positioned in the CVD reaction chamber, are heated, and are subjected to the carrier gas and the source vapor to deposit a layer of the source material on the substrates.