The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1993
Filed:
Jun. 19, 1992
Mitsuru Nishitsuji, Osaka, JP;
Hiromasa Fujimoto, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A capacitor element is formed in an integrated circuit having a compound semiconductor substrate such as a GaAs substrate and having Schottky type FETs formed on the substrate, with the capacitor element being formed by a process in which a lower electrode of a capacitor element and a lower layer portion of the gate electrode of a FET are formed by the same processing step from a high melting-point tungsten compound, a film of insulating material having a high dielectric coefficient is formed overall and is patterned to expose the gate electrode lower layer, and a high-conductance metallic film is then deposited overall and patterned to form an upper electrode of the capacitor element and an upper layer portion of the gate electrode. Capacitor elements and FETs can thereby be formed in such an IC by a simple process, while substantial reduction of the substrate area occupied by each capacitor element can be achieved.