Method for manufacturing a highly integrated semiconductor device having

Abstract

Disclosed is a method comprising forming a first electrode by forming a conductive layer on a semiconductor substrate, forming an etching mask on the conductive layer, etching the conductive layer and defining the conductive layer into cell units; and forming a dielectric film and a second electrode or the first electrode. Also disclosed is a method comprising forming a first electrode by forming a conductive structure on a semiconductor substrate, forming an etching mask on the conductive structure and etching the conductive structure; and forming a dielectric film and a second electrode on the first electrode. An insulating layer including pin holes such as a silicon nitride layer is formed on the conductive structure or the conductive layer; which is exposed under an oxidative atmosphere. The surface portion of the conductive structure or conductive layer is oxidized to form silicon oxide islands to be used as an etching mask. Since the method requires no specific process conditions, it is simple and extends the effective area of the cell capacitor, and is also applicable to various capacitor types.